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Abstract: The authors have applied positron annihilation spectroscopy to study theeffect of different growth conditions on vacancy formation in In- and N-polarInN grown by plasma-assisted molecular beam epitaxy. The results suggest thatthe structural quality of the material and limited diffusion of surface adatomsduring growth dictate the In vacancy formation in low electron-density undopedepitaxial InN, while growth conditions and thermodynamics have a less importantrole, contrary to what is observed in, e.g., GaN. Further, the results implythat in high quality InN, the electron mobility is likely limited not byionized point defect scattering, but rather by threading dislocations.



Author: Floris Reurings, Filip Tuomisto, Chad S. Gallinat, Gregor Koblmüller, James S. Speck

Source: https://arxiv.org/







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