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Abstract: Electron transport in bilayer graphene placed under a perpendicular electricfield is revealed experimentally. Steep increase of the resistance is observedunder high electric field; however, the resistance does not diverge even at lowtemperatures. The observed temperature dependence of the conductance consistsof two contributions: the thermally activated TA conduction and the variablerange hopping VRH conduction. We find that for the measured electric fieldrange 0 - 1.3 V-nm the mobility gap extracted from the TA behavior agreeswell with the theoretical prediction for the band gap opening in bilayergraphene, although the VRH conduction deteriorates the insulating state moreseriously in bilayer graphene with smaller mobility. These results show thatthe improvement of the mobility is crucial for the successful operation of thebilayer graphene field effect transistor.



Autor: Hisao Miyazaki, Kazuhito Tsukagoshi, Akinobu Kanda, Minoru Otani, Susumu Okada

Fuente: https://arxiv.org/



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