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Abstract: The problem of spin-dependent transport of electrons through a finite arrayof quantum dots attached to 1D quantum wire spin gun for varioussemiconductor materials is studied. Unlike the model considered in 1 a modelproposed here is based on the extension theory model ETM and assumes thequantum dots to have an arbitrary internal structure, i.e. the internal energylevels. The presence of internal structure in quantum dots results inenergy-dependent interaction between electrons and quantum dots. Thisinteraction changes the transmission mode of the spin current through the spingun. For the energy-dependent interaction it is shown in this article thedifference of transmission probabilities for singlet and triplet channels forseveral quantum dots in the array due to interference effects can reachapproximately 100% percent for some energy intervals. For the same energyintervals the conductance of the device reaches the value in units. As a resulta model of the spin-gun which transforms the spin unpolarized electron beaminto completely polarized one is suggested.



Autor: L A Dmitrieva, D N Krupa, Yu A Kuperin

Fuente: https://arxiv.org/



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