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Published in: Applied Physics Letters (ISSN: 0003-6951), vol. 101, num. 4, p. 043103 Melville: American Institute of Physics, 2012

In this letter we demonstrate the operation of an analog small-signal amplifier based on single-layer MoS2, a semiconducting analogue of graphene. Our device consists of two transistors integrated on the same piece of single-layer MoS2. The high intrinsic band gap of 1.8 eV allows MoS2-based amplifiers to operate with a room temperature gain of 4. The amplifier operation is demonstrated for the frequencies of input signal up to 2 kHz preserving the gain higher than 1. Our work shows that MoS2 can effectively amplify signals and that it could be used for advanced analog circuits based on two-dimensional materials. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4738986]

Keywords: MoS2 ; two-dimensional electronics ; transition-metal dichalcogenides Reference EPFL-ARTICLE-180242doi:10.1063/1.4738986View record in Web of Science





Autor: Radisavljevic, Branimir; Whitwick, Michael B.; Kis, Andras

Fuente: https://infoscience.epfl.ch/record/180242?ln=en







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