Diminished Short Channel Effects in Nanoscale Double-Gate Silicon-On-Insulator Metal-Oxide- Semiconductor Field-Effect-Transistors due to Induced Back-Gate Step Potential - Condensed Matter > Mesoscale and Nanoscale PhysicsReportar como inadecuado




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Abstract: In this letter we discuss how the short channel behavior in sub 100 nmchannel range can be improved by inducing a step surface potential profile atthe back gate of an asymmetrical double gate DG Silicon-On-Insulator SOIMetal-Oxide-Semiconductor Field-Effect- Transistor MOSFET in which the frontgate consists of two materials with different work functions.



Autor: M. Jagadesh Kumar, G. V. Reddy

Fuente: https://arxiv.org/







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