Impact Ionization and Carrier Multiplication in GrapheneReportar como inadecuado




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Published in: Journal of Applied Physics (ISSN: 0021-8979), vol. 112, num. 093707 Melville: American Institute of Physics, 2012

We develop a model for carrier generation by impact ionization in graphene, which shows that this effect is non-negligible because of the vanishing energy gap, even for carrier transport in moderate electric fields. Our theory is applied to graphene field effect transistors for which we parameterize the carrier generation rate obtained previously with the Boltzmann formalism [A. Girdhar and J. Leburton, Appl. Phys. Lett. 99, 229903 (2011)] to include it in a self-consistent scheme and compute the transistor I-V characteristics. Our model shows that the drain current exhibits an “up-kick” at high drain biases, which is consistent with recent experimental data. We also show that carrier generation affects the electric field distribution along the transistor channel, which in turn reduces the carrier velocity.

Keywords: carrier density, elemental semiconductors, field effect transistors, graphene, impact ionisation, SCF calculations, semiconductor device models Reference EPFL-ARTICLE-182349doi:10.1063/1.4761995View record in Web of Science





Autor: Pirro, Luca; Girdhar, Anuj; Leblebici, Yusuf; Leburton, Jean-Pierre

Fuente: https://infoscience.epfl.ch/record/182349?ln=en







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