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Abstract: Large scale graphene electronics desires lithographic patterning of narrowgraphene nanoribbons GNRs for device integration. However, conventionallithography can only reliably pattern ~20nm wide GNR arrays limited bylithography resolution, while sub-5nm GNRs are desirable for high on-off ratiofield-effect transistors FETs at room temperature. Here, we devised a gasphase chemical approach to etch graphene from the edges without damaging itsbasal plane. The reaction involved high temperature oxidation of graphene in aslightly reducing environment to afford controlled etch rate \leq ~1nm-min.We fabricated ~20-30nm wide GNR arrays lithographically, and used the gas phaseetching chemistry to narrow the ribbons down to <10nm. For the first time, highon-off ratio up to ~10^4 was achieved at room temperature for FETs built withsub-5nm wide GNR semiconductors derived from lithographic patterning andnarrowing. Our controlled etching method opens up a chemical way to control thesize of various graphene nano-structures beyond the capability of top-downlithography.



Autor: Xinran Wang, Hongjie Dai

Fuente: https://arxiv.org/







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