Epitaxial growth of few-layer MoS20001 on FeS2{100}Reportar como inadecuado

Epitaxial growth of few-layer MoS20001 on FeS2{100}

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Publication Date: 2014-11-13

Journal Title: Chemical Communications

Publisher: Royal Society of Chemistry

Volume: 51

Pages: 537-540

Language: English

Type: Article

Metadata: Show full item record

Citation: Liu, T., Temprano, I., King, D. A., Driver, S. M., & Jenkins, S. J. (2014). Epitaxial growth of few-layer MoS2(0001) on FeS2{100}. Chemical Communications, 51 537-540.

Description: This is the final published version. It first appeared at http://pubs.rsc.org/en/Content/ArticleLanding/2015/CC/c4cc06628f#!divAbstract.

Abstract: Physical vapour deposition of Mo on an FeS2{100} surface was performed at 170 K. Near-epitaxial growth of MoS2(0001) overlayers of the order of 1 nm thickness was observed when the Mo-covered substrate was subsequently heated to 600 K.

Sponsorship: The authors thank the EPSRC (grant ref. EP/E039782/1) for funding.


This record's URL: http://dx.doi.org/10.1039/C4CC06628Fhttp://www.repository.cam.ac.uk/handle/1810/246620

Rights: Attribution 2.0 UK: England & Wales

Licence URL: http://creativecommons.org/licenses/by/2.0/uk/

Autor: Liu, T.Temprano, I.King, D. A.Driver, S. M.Jenkins, S. J.

Fuente: https://www.repository.cam.ac.uk/handle/1810/246620


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