Analysis of Defect-Related Inhomogeneous Electroluminescence in InGaN-GaN QW LEDsReportar como inadecuado

Analysis of Defect-Related Inhomogeneous Electroluminescence in InGaN-GaN QW LEDs

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Publication Date: 2016-03-26

Journal Title: Superlattices and Microstructures

Publisher: Elsevier

Language: English

Type: Article

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Citation: Ren, C. X., Rouet-Leduc, B., Griffiths, J. T., Bohacek, E., Wallace, M. J., Edwards, P. R., Hopkins, M. A., et al. (2016). Analysis of Defect-Related Inhomogeneous Electroluminescence in InGaN/GaN QW LEDs. Superlattices and Microstructures

Description: This is the author accepted manuscript. The final version is available from Elsevier via

Abstract: The inhomogeneous electroluminescence (EL) of InGaN/GaN quantum well light emitting diode structures was investigated in this study. Electroluminescence hyperspectral images showed that inhomogeneities in the form of bright spots exhibited spectrally blue-shifted and broadened emission. Scanning electron microscopy combined with cathodoluminescence (SEM-CL) was used to identify hexagonal pits at the centre of approximately 20% of these features. Scanning transmission electron microscopy imaging with energy dispersive X-ray spectroscopy (STEM-EDX) indicated there may be p-doped AlGaN within the active region caused by the presence of the pit. Weak beam dark-field TEM (WBDF-TEM) revealed the presence of bundles of dislocations associated with the pit, suggesting the surface features which cause the inhomogeneous EL may occur at coalescence boundaries, supported by trends in the number of features observed across the wafer.

Sponsorship: The European Research Council has provided financial support under the European Community’s Seventh Framework Programme/ ERC grant agreement no. 279361 (MACONS).


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Rights: Attribution-NonCommercial-NoDerivs 2.0 UK: England & Wales

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Autor: Ren, C. X.Rouet-Leduc, B.Griffiths, J. T.Bohacek, E.Wallace, M. J.Edwards, P. R.Hopkins, M. A.Allsopp, D. W. E.Kappers, M. J.Marti



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