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Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal


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Publication Date: 2013-04-15

Journal Title: Applied Physics Letters

Publisher: AIP Publishing LLC

Volume: 102

Issue: 15

Language: English

Type: Article

Metadata: Show full item record

Citation: Kiani, A., Hasko, D. G., Milne, W. I., & Flewitt, A. J. (2013). Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal. Applied Physics Letters, 102 (15)

Description: This is the author's accepted manuscript of the publication: http://dx.doi.org/10.1063/1.4801991

Abstract: It is widely reported that threshold voltage and on-state current of amorphous indiumgallium- zinc-oxide bottom-gate thin-film transistors is strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation.

Keywords: aluminium, amorphous semiconductors, capacitance, defect states, gallium compounds, gold, II-VI semiconductors, indium compounds, molybdenum, oxidation, semiconductor-metal boundaries, thin film transistors, tin, titanium, tungsten, wide band gap semiconductors, zinc compounds

Sponsorship: This work was supported by the Engineering and Physical Sciences Research Council

Identifiers:

This record's URL: http://www.dspace.cam.ac.uk/handle/1810/244532http://dx.doi.org/10.1063/1.4801991

Rights: Copyright (2013) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.





Autor: Kiani, AhmedHasko, David G.Milne, William I.Flewitt, Andrew J.

Fuente: https://www.repository.cam.ac.uk/handle/1810/244532



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