Fabrication and characterization of zno: zn(n )-porous-silicon-si(p) heterojunctions for white light emitting diodes Report as inadecuate




Fabrication and characterization of zno: zn(n )-porous-silicon-si(p) heterojunctions for white light emitting diodes - Download this document for free, or read online. Document in PDF available to download.

G. Romero-Paredes ; J.A. Andraca-Adame ; R. Peña-Sierra ;Revista Mexicana de Física 2016, 62 (1)

Author: M.A. Vásquez-A

Source: http://www.redalyc.org/


Teaser



Revista Mexicana de Física ISSN: 0035-001X rmf@ciencias.unam.mx Sociedad Mexicana de Física A.C. México Vásquez-A, M.A.; Romero-Paredes, G.; Andraca-Adame, J.A.; Peña-Sierra, R. Fabrication and characterization of ZnO:Zn(n )-Porous-Silicon-Si(p) heterojunctions for white light emitting diodes Revista Mexicana de Física, vol.
62, núm.
1, enero-febrero, 2016, pp.
5-9 Sociedad Mexicana de Física A.C. Distrito Federal, México Available in: http:--www.redalyc.org-articulo.oa?id=57042601002 How to cite Complete issue More information about this article Journals homepage in redalyc.org Scientific Information System Network of Scientific Journals from Latin America, the Caribbean, Spain and Portugal Non-profit academic project, developed under the open access initiative RESEARCH Revista Mexicana de Fı́sica 62 (2016) 5–9 JANUARY-FEBRUARY 2016 Fabrication and characterization of ZnO:Zn(n )-Porous-Silicon-Si(p) heterojunctions for white light emitting diodes M.A.
Vásquez-Aa , G.
Romero-Paredesb , J.A.
Andraca-Adamec and R.
Peña-Sierrab,∗ a Department of Electronics, INAOE, 72840 Puebla, PUE, México. b Department of Electrical Engineering, Solid State Electronic Section (SEES), Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, México D.F. Phone (55) 5747 377, Fax (55) 5747 3879. c Centro de Nanociencias y Micro y Nanotecnologı́as del Instituto Politécnico Nacional Unidad Profesional “Adolfo López Mateos” calle Luis Enrique Erro S-N, Zacatenco, 07738 México D.F. Received 28 September 2015; accepted 16 October 2015 The fabrication and characterization of electroluminescent ZnO:Zn(n )-Porous Silicon-Si(p) heterojunctions is presented.
Highly conductive ZnO films (ZnO:Zn(n )) were produced by applying a temperature annealing at 400◦ C by 5 min to the ZnO-Zn-ZnO arrange formed by DC sputtering, and the Porous Silicon (PS) films were prepared on p-type (100) Si wafers by anodic etching.
The ZnO:Zn...





Related documents