Vol 9: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W-TaOx interface.Reportar como inadecuado



 Vol 9: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W-TaOx interface.


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This article is from Nanoscale Research Letters, volume 9.AbstractEnhanced resistive memory characteristics with 10,000 consecutive direct current switching cycles, long read pulse endurance of >105 cycles, and good data retention of >104 s with a good resistance ratio of >102 at 85°C are obtained using a Ti nanolayer to form a W-TiOx-TaOx-W structure under a low current operation of 80 μA, while few switching cycles are observed for W-TaOx-W structure under a higher current compliance >300 μA. The low resistance state decreases with increasing current compliances from 10 to 100 μA, and the device could be operated at a low RESET current of 23 μA. A small device size of 150 × 150 nm2 is observed by transmission electron microscopy. The presence of oxygen-deficient TaOx nanofilament in a W-TiOx-TaOx-W structure after switching is investigated by Auger electron spectroscopy. Oxygen ion (negative charge) migration is found to lead to filament formation-rupture, and it is controlled by Ti nanolayer at the W-TaOx interface. Conducting nanofilament diameter is estimated to be 3 nm by a new method, indicating a high memory density of approximately equal to 100 Tbit-in.2.



Autor: Prakash, Amit; Maikap, Siddheswar; Chiu, Hsien-Chin; Tien, Ta-Chang; Lai, Chao-Sung

Fuente: https://archive.org/







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