Intensity-dependent absorption coefficient and refractive index near the band gap of highly excited semiconductorsReportar como inadecuado




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Abstract : The dependence of absorption coefficient α and refractive index n on the intensity of incident light are studied near the exciton resonance. The non-boson behaviour of excitons may serve as a mechanism of optical nonlinearity leading to bistable shapes of α and n above the resonance.

Keywords : excitons light absorption nonlinear optics optical constants refractive index semiconductors





Autor: Nguyen Ba An

Fuente: https://hal.archives-ouvertes.fr/



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