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Abstract: The transversal and longitudinal resistance in the quantum Hall effect regimewas measured in a Si MOSFET sample in which a slot-gate allows one to vary theelectron density and filling factor in different parts of the sample. In caseof unequal gate voltages, the longitudinal resistances on the opposite sides ofthe sample differ from each other because the originated Hall voltagedifference is added to the longitudinal voltage only on one side depending onthe gradient of the gate voltages and the direction of the external magneticfield. After subtracting the Hall voltage difference, the increase inlongitudinal resistance is observed when electrons on the opposite sides of theslot occupy Landau levels with different spin orientations.



Autor: I. Shlimak, v. Ginodman, A. Butenko, K.-J. Friedland, S. V. Kravchenko

Fuente: https://arxiv.org/



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