THE MEASUREMENT OF ELECTRON DIFFUSION LENGTHS IN GaAsReportar como inadecuado




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Abstract : The performance of reflection-mode semiconductor photocathodes is governed by two variables, the escape probability P and the electron diffusion length L. The measurement of L is therefore important and for p-GaAs two methods are described, one involves an analysis of the yield curve, the other utilizes Hackett-s 1971 method. The results obtained are compared and discussed in terms of the doping profile near the surface. The diffusion length and hole mobility are used to calculate the minority carrier lifetime τ as a function of hole concentration. The variation of τ is in qualitative agreement with a simple model of recombination through unionized acceptors.





Autor: J. Gowers

Fuente: https://hal.archives-ouvertes.fr/



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