THE FILMS ON T. G. S. CLEAVED IN U. H. V.Reportar como inadecuado




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Abstract : The surface of T. G. S. is observed by measuring the resistance, the Hall effect mobility, and the field effect mobility of an evaporated semiconducting electrode. On the normaly preparated T. G. S. surface the field effect mobility is up to twenty times smaller than the Hall mobility, on in U. H. V.-cleaved T. G. S. pressure less than 5 x 10-9 torr against that the two mobilities are praktically equal. This different behaviour is a consequence of the ion absence at the U. H. V.-cleaved T. G. S. surface.





Autor: Dr. Ziebert

Fuente: https://hal.archives-ouvertes.fr/



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