On the temperature dependence of the EBIC contrast of dislocations in siliconReportar como inadecuado




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Abstract : In some recent papers the measurements by Ourmazd et al. J. Physique Colloq. 44 1983 C4-289 of the temperature dependence of the electron beam induced current contrast of dislocations in silicon have been interpreted as being in disagreement with the predictions of the linear contrast model proposed by Donolato. Here it is shown that this conclusion was based on an improper assumption regarding the functional form of the recombination strength of a dislocation; omitting this assumption removes the discrepancy.

keyword : dislocations EBIC elemental semiconductors silicon





Autor: C. Donolato

Fuente: https://hal.archives-ouvertes.fr/



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