Effect of HF Concentration on Physical and Electronic Properties of Electrochemically Formed Nanoporous SiliconReportar como inadecuado




Effect of HF Concentration on Physical and Electronic Properties of Electrochemically Formed Nanoporous Silicon - Descarga este documento en PDF. Documentación en PDF para descargar gratis. Disponible también para leer online.

Journal of NanomaterialsVolume 2009 2009, Article ID 728957, 7 pages

Research Article

Physik der Kondensierten Materie, TU Braunschweig, 38106 Braunschweig, Germany

Institut für Elektrische Messtechnik und Grundlagen der Elektrotechnik, TU Braunschweig, 38106 Braunschweig, Germany

Received 8 June 2008; Revised 28 August 2008; Accepted 8 January 2009

Academic Editor: Rakesh Joshi

Copyright © 2009 Pushpendra Kumar et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The most common fabrication technique of porous silicon PS is electrochemical etching of a crystalline silicon wafer in a hydrofluoric HF acid-based solution. The electrochemical process allows for precise control of the properties of PS such as thickness of the porous layer, porosity, and average pore diameter. The effect of HF concentration in the used electrolyte on physical and electronic properties of PS was studied by visual color observation, measuring nitrogen sorption isotherm, field emission type scanning electron microscopy, Raman spectroscopy, and photoluminescence spectroscopy. It was found that with decrease in HF concentration, the pore diameter increased. The PS sample with large pore diameter, that is, smaller nanocrystalline size of Si between the pores, was found to lead to a pronounced photoluminescence peak. The systematic rise of photoluminescence peak with increase of pore diameter and porosity of PS was attributed to quantum confinement. The changes in nanocrystalline porous silicon were also clearly observed by an asymmetric broadening and shift of the optical silicon phonons in Raman spectra. The change in electronic properties of PS with pore diameter suggests possibilities of use of PS material as a template for fundamental physics as well as an optical material for technological applications.





Autor: Pushpendra Kumar, Peter Lemmens, Manash Ghosh, Frank Ludwig, and Meinhard Schilling

Fuente: https://www.hindawi.com/



DESCARGAR PDF




Documentos relacionados