Influence of Front and Back Contacts on Photovoltaic Performances of p-n Homojunction Si Solar Cell: Considering an Electron-Blocking LayerReportar como inadecuado




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International Journal of Photoenergy - Volume 2017 2017, Article ID 7415851, 6 pages - https:-doi.org-10.1155-2017-7415851

Research Article

Department of Electrical and Electronic Engineering EEE, Pabna University of Science and Technology PUST, Pabna 6600, Bangladesh

Electrical and Electronic Engineering, Rajshahi University of Engineering and Technology RUET, Rajshahi 6204, Bangladesh

Correspondence should be addressed to Md. Feroz Ali

Received 17 November 2016; Accepted 22 January 2017; Published 12 March 2017

Academic Editor: Yatendra S. Chaudhary

Copyright © 2017 Md. Feroz Ali and Md. Faruk Hossain. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In this simultion work, the effect of front and back contacts of p-n homojunction Si solar cell with an electron-blocking layer EBL has been studied with the help of a strong solar cell simulator named AMPS-1D analysis of microelectronic and photonic structures one dimensional. Without the effect of these contact parameters, low solar cell efficiency has been observed. Fluorine-doped tin oxide FTO with high work function 5.45 eV has been used as the front contact to the proposed solar cell. Zinc Zn metal which has a work function of 4.3 eV has been used as the back contact of the proposed model. With FTO as the front contact and Zn as the back contact, the optimum efficiency of 29.275% Voc = 1.363 V, Jsc = 23.747 mA-cm

, FF = 0.905 has been observed. This type of simple Si-based p-n homojunction solar cell with EBL of high efficiency has been proposed in this paper.





Autor: Md. Feroz Ali and Md. Faruk Hossain

Fuente: https://www.hindawi.com/



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