Structural and Optical Properties of CuInS2 Thin Films Prepared by Magnetron Sputtering and Sulfurization Heat TreatmentReportar como inadecuado




Structural and Optical Properties of CuInS2 Thin Films Prepared by Magnetron Sputtering and Sulfurization Heat Treatment - Descarga este documento en PDF. Documentación en PDF para descargar gratis. Disponible también para leer online.

Journal of Nanomaterials - Volume 2015 2015, Article ID 579489, 8 pages -

Research Article

Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology, Yancheng, Jiangsu 224051, China

School of Physics and Chemistry, Henan Polytechnic University, Jiaozuo, Henan 454000, China

Received 22 December 2014; Accepted 29 January 2015

Academic Editor: Wang Danping

Copyright © 2015 Rongfeng Guan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

CuInS2 thin films were prepared by sulfurization of Cu-In precursor films through magnetron sputtering and the resulting films characterized using X-ray diffraction, Raman spectrometry, and UV-Vis spectrophotometry. The results demonstrate that a sputtering power of 80–120 W is more suitable for sputtered Cu-In precursor films and can be used to obtain CuInS2 films with good crystallinity through vulcanization heat treatment. The sputtering gas pressure and sulfurization temperature were shown to impact on the film quality due to improper processes during the CuInS2 phase. Some of the CuIn11S17 and CuS2 impurities were observed in the composition of the prepared CuInS2 thin films. Optimization of process parameters obtained from the experimental data was determined as a sputtering power of 80~120 W, a sputtering gas pressure of 0.6–0.8 Pa, a heat treatment temperature of 450~470°C, and a holding time of 2~3 hours. The optical band gap obtained for CuInS2 thin films is between 1.48 and 1.5 eV.





Autor: Rongfeng Guan, Xiaoxue Wang, and Qian Sun

Fuente: https://www.hindawi.com/



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