MODELING OF LPCVD SILICON NITRIDE PROCESSReportar como inadecuado




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Abstract : Much attention has been paid to the modeling of LPCVD process by several research groups and authors. Our simulation model of LPCVD process was proposed in 1979 and 1980, and then improved and extended several times. Our simulation formulae are algebraic, so it is easy to be used. Our model was successfully used for the LPCVD Poly-Si process in our previous papers, and also for the LPCVD Si3N4 process in this paper. The theoretical results agree very well with experiments reported in literature.





Autor: Ji-Tao Wang Shi-Li Zhang Yong-Fa Wang Wei Zhang Zheng-Chang Chen Ke-Yun Zhang Yuan-Fang Wang

Fuente: https://hal.archives-ouvertes.fr/



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