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Abstract: Using single-crystal transistors, we have performed a systematic experimentalstudy of electronic transport through oxidized copper-rubrene interfaces as afunction of temperature and bias. We find that the measurements can bereproduced quantitatively in terms of the thermionic emission theory forSchottky diodes, if the effect of the bias-induced barrier lowering isincluded. Our analysis emphasizes the role of the coupling between metal andmolecules, which in our devices is weak due to the presence of an oxide layerat the surface of the copper electrodes.



Autor: A.S. Molinari, I. Gutierrez Lezama, P. Parisse, T. Takenobu, Y. Iwasa, A. F. Morpurgo

Fuente: https://arxiv.org/







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