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Abstract: We study theoretically current quantization in the charge turnstile based onthe hybrid SINIS or NISIN SET transistor. The quantization accuracy islimited by either Andreev reflection or by Cooper pair - electron cotunneling.The rates of these processes are calculated in the ``above-the-threshold-regime when they compete directly with the lowest-order tunneling. We show thatby shaping the ac gate voltage driving the turnstile, it should be possible toachieve the metrological accuracy of $10^{-8}$, while maintaining the absolutevalue of the quantized current on the order of 30 pA, just by one turnstilewith realistic parameters using aluminium as superconductor.



Autor: Dmitri V. Averin, Jukka P. Pekola

Fuente: https://arxiv.org/







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