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Abstract : The existence of a direct drain to source leakage current is experimentally demonstrated on n-channel SOS MOS transistors. The measured currents are shown to vary according to a model of an inversion channel at the sapphire interface working in the weak inversion regime. A value of interface state density at the silicon sapphire interface of 1012 cm-2 eV-1 is determined by static IV measurement.

Keywords : insulated gate field effect transistors interface electron states leakage currents semiconductor device models direct drain source leakage current n channel SOS MOS transistors inversion channel weak inversion regime interface state density semiconductor device





Autor: P. Gentil

Fuente: https://hal.archives-ouvertes.fr/



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