Purity and Defect Characterization of Single-Wall Carbon Nanotubes Using Raman SpectroscopyReport as inadecuate




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Journal of NanomaterialsVolume 2011 2011, Article ID 786763, 7 pages

Research Article

Nanosystem Research Institute NRI, National Institute of Advanced Industrial Science and Technology AIST, 1-1-1 Higashi, Tsukuba 305-8562, Japan

Department of Chemistry, Nagoya University, Nagoya 464-8602, Japan

Nanotube Research Center, National Institute of Advanced Industrial Science and Technology AIST, 1-1-1 Higashi, Tsukuba 305-8565, Japan

JST, CREST, Kawaguchi 330-0012, Japan

Received 15 June 2010; Accepted 23 November 2010

Academic Editor: Teng Li

Copyright © 2011 Yasumitsu Miyata et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We investigated the purity and defects of single-wall carbon nanotubes SWCNTs produced by various synthetic methods including chemical vapor deposition, arc discharge, and laser ablation. The SWCNT samples were characterized using scanning electron microscopy SEM, thermogravimetric analysis TGA, and Raman spectroscopy. Quantitative analysis of SEM images suggested that the G-band Raman intensity serves as an index for the purity. By contrast, the intensity ratio of G-band to D-band G-D ratio reflects both the purity and the defect density of SWCNTs. The combination of G-band intensity and G-D ratio is useful for a quick, nondestructive evaluation of the purity and defect density of a SWCNT sample.





Author: Yasumitsu Miyata, Kohei Mizuno, and Hiromichi Kataura

Source: https://www.hindawi.com/



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