Area-Selective ZnO Thin Film Deposition on Variable Microgap Electrodes and Their Impact on UV SensingReportar como inadecuado

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Journal of NanomaterialsVolume 2013 2013, Article ID 301674, 5 pages

Research ArticleNano Biochip Research Group, Institute of Nano Electronic Engineering INEE, Universiti Malaysia Perlis UniMAP, 01000 Kangar, Perlis, Malaysia

Received 4 January 2013; Revised 7 April 2013; Accepted 20 May 2013

Academic Editor: Gong Ru Lin

Copyright © 2013 Q. Humayun et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


ZnO thin films were deposited on patterned gold electrodes using the sol-gel spin coating technique. Conventional photolithography process was used to obtain the variable microgaps of 30 and 43 μm in butterfly topology by using zero-gap chrome mask. The structural, morphological, and electrical properties of the deposited thin films were characterized by X-ray diffraction XRD, scanning electron microscope SEM, and Keithley SourceMeter, respectively. The current-voltage I-V characterization was performed to investigate the effect of UV light on the fabricated devices. The ZnO fabricated sensors showed a photo to dark current Iph-Id ratios of 6.26 for 30 μm and 5.28 for 43 μm gap electrodes spacing, respectively. Dynamic responses of both fabricated sensors were observed till 1V with good reproducibility. At the applied voltage of 1 V, the response time was observed to be 4.817 s and 3.704 s while the recovery time was observed to be 0.3738 s and 0.2891 s for 30 and 43 μm gaps, respectively. The signal detection at low operating voltages suggested that the fabricated sensors could be used for miniaturized devices with low power consumption.

Autor: Q. Humayun, M. Kashif, and U. Hashim



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