Room temperature observation of electron resonant tunneling through InAs-AlAs quantum dots - Condensed Matter > Mesoscale and Nanoscale PhysicsReportar como inadecuado




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Abstract: Molecular beam epitaxy is employed to manufacture self-assembled InAs-AlAsquantum-dot resonant tunneling diodes. Resonant tunneling current issuperimposed on the thermal current, and they make up the total electrontransport in devices. Steps in current-voltage characteristics and peaks incapacitance-voltage characteristics are explained as electron resonanttunneling via quantum dots at 77K or 300K, and this is the first time thatresonant tunneling is observed at room temperature in III-V quantum-dotmaterials. Hysteresis loops in the curves are attributed to hot electroninjection-emission process of quantum dots, which indicates the concomitantcharging-discharging effect.



Autor: Jie Sun, Ruoyuan Li, Chang Zhao, Like Yu, Xiaoling Ye, Bo Xu, Yonghai Chen, Zhanguo Wang

Fuente: https://arxiv.org/







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