Mechanism of Ambipolar Field-Effect Transistors on One-Dimensional Organic Mott Insulators - Condensed Matter > Strongly Correlated ElectronsReportar como inadecuado




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Abstract: The experimentally observed, ambipolar field-effect characteristics of Mottinsulators are reproduced in the one-dimensional Hubbard model attached to atight-binding model for source and drain electrodes. The formation of Schottkybarriers, originating from the work-function difference, is taken into accountby a potential satisfying the Poisson equation with an appropriate boundarycondition. Then, these field-effect characteristics are shown to be related byunique current-voltage characteristics of metal-Mott-insulator interfaces.



Autor: Kenji Yonemitsu Institute for Molecular Science

Fuente: https://arxiv.org/







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