ELECTRICAL CHARACTERISTICS OF Au SCHOTTKY CONTACTS EVAPORATED ON PULSED ELECTRON BEAM ANNEALED N-TYPE 100 SILICONReportar como inadecuado




ELECTRICAL CHARACTERISTICS OF Au SCHOTTKY CONTACTS EVAPORATED ON PULSED ELECTRON BEAM ANNEALED N-TYPE 100 SILICON - Descarga este documento en PDF. Documentación en PDF para descargar gratis. Disponible también para leer online.



Abstract : Gold Schottky contacts were deposited on Pulsed Electron Beam Annealed P.E.B.A. virgin N-type 100 silicon. Above a 1 J-cm2 fluence threshold a strong degradation of the Schottky diodes IV characteristics has been observed with a drop of the barrier height and a fast increase of the ideality factor. Moreover, capacitance measurements combined with oxide stripping have shown that donor centers in excess of 1016 cm-3 are generated in the P.E.B.A. induced regrowth layer. Isochronal thermal annealing under H2 atmosphere was performed on P.E.B.A. processed samples before depositing the Gold contacts. Improvement of the diode characteristics have been obtained when increasing the annealing temperature up to 600°C.





Autor: M. Doghmane D. Barbier A. Laugier

Fuente: https://hal.archives-ouvertes.fr/



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