ANALYSIS AND ORIGIN OF POINT DEFECTS IN SILICON AFTER LIQUID PHASE TRANSIENT ANNEALINGReportar como inadecuado




ANALYSIS AND ORIGIN OF POINT DEFECTS IN SILICON AFTER LIQUID PHASE TRANSIENT ANNEALING - Descarga este documento en PDF. Documentación en PDF para descargar gratis. Disponible también para leer online.

1 IReS - Institut de Recherches Subatomiques

Abstract : Works devoted to the study of point defects in pulsed laser annealed silicon are reviewed by means of electrical characterization. Tailing effects of the implanted distribution are responsible for the observed residual defects in the case of a layer amorphized by ion implantation. However, difficulty in annealing some kinds of point defects by reducing the duration of laser pulse have been shown using slightly disordered silicon. Finally, in the case of irradiated virgin silicon, a high level of point defects are created, which are essentially donor levels that introduce a compensating effect in P-type silicon.





Autor: A. Mesli - J. Muller - P. Siffert -

Fuente: https://hal.archives-ouvertes.fr/



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