HIGHLY CONTROLLED DIFFUSION OF ION IMPLANTED ARSENIC BY MULTIPLE SCAN ELECTRON BEAM HEATINGReportar como inadecuado




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Abstract : Multiple scan electron beam heating may be used to anneal high dose arsenic implantation damage insilicon. This paper covers the extension of this technique to highly controlled arsenic diffusion with application to bipolar emitter structures. It has proved possible to model the diffusion using a similar approach to that used for conventional furnace annealing. However, in practice significant dopant evaporation is found unless a deposited capping layer is used. It is shown that the technique is able to provide highly controlled diffusion ±5% for junction depths of 0.2 µm at processing temperatures of ~1100°C. Carrier concentration profiles from spreading resistance data and atomic concentration profiles measured by SIMS for bipolar emitter-base structures are included.





Autor: D. Godfrey R. Mcmahon H. Ahmed M. Dowsett

Fuente: https://hal.archives-ouvertes.fr/



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