CHARACTERIZATION OF DISLOCATIONS AND THEIR EFFECTS IN SILICON DEVICE TECHNOLOGYReportar como inadecuado




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Abstract : Methodical studies on cause and valuation of the dislocation EBIC contrast are presented. The application of the EBIC method to investigations of negative enhanced reverse current and positive intrinsic gettering effects of dislocations on device performance are demonstrated.





Autor: M. Kittler W. Seifert E. Bugiel H. Richter

Fuente: https://hal.archives-ouvertes.fr/



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