DEVELOPMENT OF BORON AND PHOSPHORUS LIQUID-METAL-ION SOURCESReportar como inadecuado




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Abstract : Boron B and phosphorus P liquid-metal-ion LMI sources have been developed for maskless implantation in silicon. The B-LMI source, which employs a carbon or carbide emitter and a Ni-B base alloy as its source material, has a life time of more than 250 hours. The P-LMI source utilizing a Cu-P alloy achieves a life time of more than 20 hours. The ions emitted from these sources are investigated by mass and energy analyses. Isotope effect has been observed for B ion emission with a B-LMI source. Focused B+ implantation in Si was preliminarily carried out using a mass-separated microbeam column.





Autor: T. Ishitani K. Umemura Y. Kawanami H. Tamura

Fuente: https://hal.archives-ouvertes.fr/



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