POTENTIAL DISTRIBUTION IN METAL-VACUUM-METAL PLANAR BARRIERS CONTAINING SPHERICAL PROTRUSIONS OR INCLUSIONSReportar como inadecuado




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Abstract : We present an exact method for the fast computation of a the electrostatic potential distribution between two biased planar, parallel electrodes containing a spherical protrusion or an isolated conducting, spherical insertion and b the classical image charge potential experienced by an electron crossing the plano-spherical junction.





Autor: A. Lucas J. Vigneron J. Bono P. Cutler T. Feuchtwang R. Good Jr. Huang Z. Huang

Fuente: https://hal.archives-ouvertes.fr/



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