Monte Carlo Simulations of Impact Ionization Feedback in MOSFET StructuresReport as inadecuate




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VLSI Design - Volume 8 1998, Issue 1-4, Pages 13-19

Bell Labs, Lucent Technologies, 600 Mountain Avenue, Murray Hill, 07974, NJ, USA



Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Although impact ionization feedback is recognized as an important current multiplicationmechanism, its importance as a carrier heating mechanism has been largelyoverlooked. This work emphasizes the inclusion of impact ionization feedback in MonteCarlo device simulations, and its implications for carrier heating in sub-micron CMOSand EEPROM technologies.





Author: Jeff D. Bude

Source: https://www.hindawi.com/



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