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Abstract : The optical constants of GaAs substrates have been determined by ellipsometry for λ = 5 461 Å. They are n = 3.923 and k = 0.304. The fundamental equation of ellipsometry was solved for the case of transparent films on GaAs. Investigations on thermally oxidized GaAs revealed that the resulting film has a complex structure, with an accumulation of arsenic at the GaAs-film interface.

Keywords : gallium compounds optical films





Autor: Karl H. Zaininger Akos G. Revesz

Fuente: https://hal.archives-ouvertes.fr/



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