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Abstract: We report electron spin resonance ESR measurements on a large-area siliconMOSFET. An ESR signal at g-factor 1.99991, and with a linewidth of 0.6 G, isobserved and found to arise from two-dimensional 2D electrons at the Si-SiO2interface. The signal and its intensity show a pronounced dependence on appliedgate voltage. At gate voltages below the threshold of the MOSFET, the signal isfrom weakly confined, isolated electrons as evidenced by the Curie-liketemperature dependence of its intensity. The situation above threshold appearsmore complicated. These large-area MOSFETs provide the capability tocontrollably tune from insulating to conducting regimes by adjusting the gatevoltage while monitoring the state of the 2D electron spins spectroscopically.



Autor: S. Shankar, A. M. Tyryshkin, S. Avasthi, S. A. Lyon

Fuente: https://arxiv.org/







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