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Advances in Condensed Matter PhysicsVolume 2013 2013, Article ID 591787, 9 pages

Research Article

Centro de Investigación en Biotecnología Aplicada, Instituto Politécnico Nacional, Ex-Hacienda de San Juan Molino, 90700 Tepetitla, TLAX, Mexico

Universidad Politécnica de Pachuca, Rancho Luna, Ex-Hacienda de Santa Bárbara, 43830 Zempoala, HGO, Mexico

Departmento de Ingeniería Eléctrica, SEES, CINVESTAV-IPN. A. P. 14-740, 07000 México, DF, Mexico

Received 27 May 2013; Accepted 30 July 2013

Academic Editor: S. J. Poon

Copyright © 2013 Joel Díaz-Reyes et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We studied the effect of annealing temperature on the physical properties of WO3 thin films using different experimental techniques. WO3 has been prepared by hot-filament metal oxide deposition HFMOD. The films, chemical stoichiometry was determined by X-ray photoelectron spectroscopy XPS. The monoclinic single-phase nature of the as-deposited films, structure was changed to triclinic structure by annealing them at higher temperatures than 400°C, which has been determined by the X-ray diffraction analysis. By Raman scattering is confirmed the change of crystalline phase, of monoclinic to triclinic, since that lattice vibrationalmodes of as-deposited WO3 and annealed at 500°C present clearly differences. WO3 band gap energy can be varied from 2.92 to 3.15 eV by annealing WO3 from 0 to 500°C as was obtained by transmittance measurements. The photoluminescence response of the as-deposited film presents three radiative transitions observed at 2.85, 2.41, and 2.04 eV that could be associated with oxygen vacancies; the first one is shifted to higher energies as the annealing temperature is increased due to the change of crystalline phase of the WO3.

Autor: Joel Díaz-Reyes, Roberto Castillo-Ojeda, Miguel Galván-Arellano, and Orlando Zaca-Moran



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