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Abstract : The results of some investigations of charges movement is solid 3He and 4He are reported. It has been measured the static characteristics of diode JU at a constant temperature T, current dependencies JT at different voltages U applied and dynamic transitional characteristics Jt on step connection of U. Activation energies of charges diffusion in 3He are compared with the activation energies of point defects obtained by another methods.





Autor: V. Yefimov L. Mezhov-Deglin

Fuente: https://hal.archives-ouvertes.fr/



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