Thermal Analysis of Si-GaAs Bonding Wafers and Mitigation Strategies of the Bonding StressesReportar como inadecuado




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Advances in Materials Science and Engineering - Volume 2017 2017, Article ID 4903924, 8 pages - https:-doi.org-10.1155-2017-4903924

Research Article

Key Laboratory of Electronic Equipment Structure Design, Ministry of Education, Xidian University, Xi’an 710071, China

Shanghai Institute of Space Power Sources, Shanghai 200245, China

Correspondence should be addressed to Yuanying Qiu

Received 13 January 2017; Accepted 16 March 2017; Published 9 April 2017

Academic Editor: Kohji Tashiro

Copyright © 2017 Yuanying Qiu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In order to effectively reduce the thermal stresses of Si-GaAs bonding wafers during their annealing process, first of all, based on E. Suhir’s bimaterial thermal stress theory, the thermal stresses in the wafer bonding interfaces are analyzed and the thermal stress distribution formulas are obtained. Then, the thermal stress distribution curves of Si-GaAs bonding interfaces are investigated by finite element method FEM and are compared with the results from E. Suhir’s bimaterial thermal stress theory. Finally, some effective strategies are proposed to reduce the thermal stresses in the bonding interfaces.





Autor: Yuanying Qiu, Xun Qiu, Xianghu Guo, Dian Wang, and Lijie Sun

Fuente: https://www.hindawi.com/



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