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VLSI Design - Volume 13 2001, Issue 1-4, Pages 335-340

Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA

3255 Beckman Institute, University of Illinois, 405 North Mathews Avenue, Urbana, IL 61801, USA

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


With the progress of integrated technology, the feature size of experimental electrondevices have already been scaled down deeply into the sub–0.1 μm region. For suchultra-small devices, it is increasingly important to take quantum mechanical effects intoaccount for device simulation. In this paper, we present a new approach for quantummodeling, applicable to multi-dimensional ultra-small device simulation. In this work,the quantum effects are represented in terms of quantum mechanically correctedpotential in the classical Boltzmann equation. We apply the Monte Carlo method tosolve the quantum transport equation, and demonstrate that the quantum effects suchas tunneling and quantum confinement effects can be incorporated in the standardMonte Carlo techniques.

Autor: Hideaki Tsuchiya, Brian Winstead, and Umberto Ravaioli

Fuente: https://www.hindawi.com/


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