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Abstract: We have realised a semiconductor quantum structure that produceselectroluminescence while operating in the light-matter strong coupling regime.The mid-infrared light emitting device is composed of a quantum cascadestructure embedded in a planar microcavity, based on the GaAs-AlGaAs materialsystem. At zero bias, the structure is characterised using reflectivitymeasurements which show, up to room temperature, a wide polariton anticrossingbetween an intersubband transition and the resonant cavity photon mode. Underelectrical injection the spectral features of the emitted light changedrastically, as electrons are resonantly injected in a reduced part of thepolariton branches. Our experiment demonstrates that electrons can beselectively injected into polariton states up to room temperature.

Author: Luca Sapienza MPQ, Angela Vasanelli MPQ, Raffaele Colombelli IEF, Cristiano Ciuti MPQ, Yannick Chassagneux IEF, Christophe Manque

Source: https://arxiv.org/

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