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International Journal of Microwave Science and TechnologyVolume 2013 2013, Article ID 328406, 6 pages

Research Article

Electronics and Communications Engineering Department, Egypt-Japan University of Science and Technology, New Borg Al-Arab, 21934 Alexandria, Egypt

E-JUST Center, Kyushu University, Nishi-ku, Fukuoka 819-0395, Japan

Graduate School of ISSE, Kyushu University, Nishi-ku, Fukuoka 819-0395, Japan

Received 29 November 2012; Accepted 26 March 2013

Academic Editor: Mohammad S. Hashmi

Copyright © 2013 K. Yousef et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

This paper presents the design of ultra-wideband low noise amplifier UWB LNA. The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 µm CMOS technology process.





Autor: K. Yousef, H. Jia, R. Pokharel, A. Allam, M. Ragab, H. Kanaya, and K. Yoshida

Fuente: https://www.hindawi.com/



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