Crystal and Electronic Structures and the Corrosion Resistance for Metal Nitrides in the TiN-AIN SystemReportar como inadecuado




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Abstract : Both aluminum and titanium K-edge XAFS spectra of Ti1-xAlxN 0≤x≤1.0 films were measured to investigate the corrosion resistance of compounds in the TiN-AlN system. Analyses of both Al and Ti K-XAFS revealed that both Ti and Al atoms occupy the octahedral site in the NaCl-type Ti1-xAlxN 0≤x≤0.58 and the tetrahedral site in both the würtzite-type Ti1-xAlxN 0.83≤x≤1 and the intermediate phase x≈0.7. Ti K-XAFS of Ti1-xAlxN films annealed in O2 gas flow and aged in distilled water were also measured by employing the helium ion yield technique with a small angle incidence. The XANES spectrum of annealed TiN film shows the pre-edge feature, which is observed for rutile phase TiO2 and such feature is not appreciably observed for NaCl-type Ti1-xAlxN1s and merely observed for the intermediate phase and würtzite-type Ti1-xAlxN1s. It has been found from the XANES spectra that Ti1-xAlxN1s x=0.9 is oxidized in water and Al2TiO5 is produced while TiN and Ti1-xAlxN x=0.9 is hardly oxidized. Results of the XPS measurements and the DV-Xα MO calculations are also discussed.





Autor: M. Takahashi F. Kanamaru M. Harada I. Watanabe

Fuente: https://hal.archives-ouvertes.fr/



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