Study on Feasibility of Minority Carrier Complete Drag in Silicon. New Investigation Method Intended for Indirect-Gap SemiconductorsReportar como inadecuado




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Abstract : A method is proposed for determining the electron - hole scattering parameters in indirect gap semiconductors when the carrier injection level is low. The proposed method is used to study the electron - hole scattering in silicon. The results are evidence that minority carrier complete drag by majority-electrons is possible in n-type material at a doping level of Nd > 1017cm-3 even at room temperatures.





Autor: T. Mnatsakanov L. Pomortseva V. Shuman

Fuente: https://hal.archives-ouvertes.fr/



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