# Cell Architecture for Nanoelectronic Design

1 High Performance IC Design Group, DEE

Abstract : Several nanoelectronic devices have been already proved. However, no architecture which makes use of them provides a feasible opportunity to build medium-large systems. Nanoarchitecture proposals only solve a small part of the problems needed to achieve a real design. In this paper, we propose and analyze a cell architecture that overcomes most of those at the gate level. Using the cell structure we build 2 and 3-input NAND gates showing their error probabilities. Finally, we outline a method to further improve the structure-s tolerance by taking advantage of interferences among nanodevices. Using this improvement we show that it is possible to reduce the output standard deviation by a factor larger than $\sqrt{2}$ and restitute the signal levels using nanodevices.

Keywords : Nanoarchitectures fault-tolerance defect-tolerance noise-tolerance averaging cell

Author: F. Martorell - A. Rubio -

Source: https://hal.archives-ouvertes.fr/