Dispersion Impact on Ballistic CNTFET n -i-n PerformancesReport as inadecuate

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1 LTCI - Laboratoire Traitement et Communication de l-Information

Abstract : The designs integrating the promising carbon nanotube transistors CNTFET will have to take into account the constraints implied by the strong dispersion inherent to nanotube manufacturing. This paper proposes to characterize the main CNTFET performances : on-current Ion, Ion-Ioff ratio and inverse sub-threshold slope S according to the dispersion on the nanotube diameter. For this purpose, we use a compact model suitable for testing several diameter values.

Keywords : CNTFET Compact Modeling Dispersion Impact

Author: P. Desgreys - J. Gomes da Silva - D. Robert -

Source: https://hal.archives-ouvertes.fr/


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