THEORETICAL ANALYSIS OF THE TWO-TERMINAL MOS CAPACITOR ON SOI SUBSTRATEReportar como inadecuado




THEORETICAL ANALYSIS OF THE TWO-TERMINAL MOS CAPACITOR ON SOI SUBSTRATE - Descarga este documento en PDF. Documentación en PDF para descargar gratis. Disponible también para leer online.



Abstract : The present paper deals with the analytical and numerical study of MOS capacitors on SOI substrates. The major concern is the theoretical treatment of such devices with floating substrate. Special care has been taken to keep the mathematical modeling consistent with physical considerations. The importance and the role of the underlying silicon substrate have been highlighted. The different operating conditions of the capacitance-voltage characteristic have been interpreted in terms of device intrinsic physical mechanisms.





Autor: P. Paelinck D. Flandre A. Terao F. Van de Wiele

Fuente: https://hal.archives-ouvertes.fr/



DESCARGAR PDF




Documentos relacionados