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Abstract: A simple yet highly reproducible method to suppress contamination of grapheneat low temperature inside the cryostat is presented. The method consists ofapplying a current of several mA through the graphene device, which is heretypically a few $\mu$m wide. This ultra-high current density is shown to removecontamination adsorbed on the surface. This method is well suited for quantumelectron transport studies of undoped graphene devices, and its utility isdemonstrated here by measuring the anomalous quantum Hall effect.



Autor: J. Moser, A. Barreiro, A. Bachtold

Fuente: https://arxiv.org/



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