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We deposited Ge films on Si substrates by molecular beam epitaxy MBE method. The specimens were annealed at around 750 C using microwave- plasma heating technique which we had reported before. After these pro- cesses, we carried out special scanning transmission electron microscopic STEM observation. The moiré between the crystal lattices and the scanning lines controlled by STEM was utilized to show lattice-spacing distribution. The results exhibited that we were succeeded in forming lattice-relaxed Ge thin films. It was also recognized that this STEM moiré technique is very useful to observe lattice-spacing distribution for large area with high resolution.

KEYWORDS

STEM Moiré, Lattice Strain, Ge on Si, Plasma Heating

Cite this paper

Yamanaka, J. , Yamamoto, C. , Nakaie, H. , Arai, T. , Arimoto, K. , O. Hara, K. and Nakagawa, K. 2017 STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon. Journal of Materials Science and Chemical Engineering, 5, 102-108. doi: 10.4236-msce.2017.51014.





Autor: Junji Yamanaka1, Chiaya Yamamoto2,3, Hiroki Nakaie1, Tetsuji Arai1, Keisuke Arimoto1, Kosuke O. Hara1, Kiyokazu Nakagawa1

Fuente: http://www.scirp.org/



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